Sequential Read SpeedUp to 560 MB/s
Sequential Write SpeedUp to 530 MB/s
Random Read (4KB, QD32)Up to 98,000 IOPS
Random Write (4KB, QD32)Up to 88,000 IOPS
Random Read (4KB, QD1)Up to 13,000 IOPS
Random Write (4KB, QD1)Up to 36,000 IOPS
Capacity500GB
ControllerSamsung MKX Controller
NAND Flash MemorySamsung V-NAND 3bit MLC
InterfaceSATA 6Gb/s (SATA 3.0)
Form Factor2.5 inch
TBW (Total Bytes Written)300 TBW
MTBF (Mean Time Between Failures)1.5 Million Hours
Power Consumption (Active)2.5W (Typical)
Power Consumption (Idle)30 mW (Typical)
Operating Temperature0°C to 70°C
Shock Resistance1500 G & 0.5 ms (Half sine)
Dimensions100 x 69.85 x 6.8 (mm)
Weight45.0 g